砷化镓衬底（GaAs Wafer）
发布于2021-05-28 10:25 文章来源：未知
砷化镓衬底 GaAs Wafers
 Provided By Wafer Technology
♦电子迁移率比硅高6倍，作为超高速、超高频器件和集成电路的必需品。
♦用于制作集成电路衬底、红外探测器、γ光子探测器等。 ♦VGF生长工艺，保证了材料的纯度。 ♦所有基片都经过精密抛光并充保护气氛保护，满足Epi-Ready使用要求。 ♦晶向选择：可提供其他晶向，如(110)，（111），（311）A。 ♦先进的光学测量技术，包括椭偏仪、粒子监测器等，保证我们生产的每一片基片的表面干净无污染。 ♦生产厂家: Mateck Crystal, Germany；日本住友。 |
Wafer Specifications | |||||||||||
| Diameter Slices | 2" | 3" | 4" | |||||||||
| Orientation | (100) +/-0.1° | (100) +/- 0.1° | (100) +/- 0.1° | |||||||||
| Diameter (mm) | 50.5 +/- 0.5 | 76.2 +/- 0.4 | 100.0 +/- 0.1 | |||||||||
| Flat Option | EJ | EJ | EJ | |||||||||
| Flat Tolerance | +/- 0.5° | +/- 0.5° | +/- 0.5° | |||||||||
| Major Flat Length (mm) | 16 +/- 2 | 22 +/- 2 | 32 +/- 2 | |||||||||
| Minor Flat Length (mm) | 8 +/- 1 | 11 +/- 1 | 18 +/- 2 | |||||||||
| Thickness (um) |
350 +/-25 or 500 +/- 25 |
625 +/- 25 | 500 +/- 25 | |||||||||
| Electrical and Dopant Specifications | ||||||||||||
| Dopant | Type |
Carrier
Concentration cm-3
|
E.P.D. cm^-2 |
Mobility
cm^2•V^-1•s^-1
|
||||||||
| Undoped | Semi-Insulating | Not Specified |
2" <= 2,000 3" <= 5,000 4" <= 10,000 |
>=5000 | ||||||||
| Zinc | p-type | (0.5-5)*10^19 |
2" <= 3,000 3" <= 5,000 |
Not Specified
|
||||||||
| Mid Silicon | n-type | (1-10)*10^17 |
2" <= 1,500 3", No Specified |
>=2000 | ||||||||
| High Silicon | n-type | (1-5)*10^18 |
2" & 3" Grade 1 <= 100 Grade 2 <= 500 |
Not Specified | ||||||||
| Flatness Specifications | ||||||||||||
| Wafer Form | 2" | 3" | 4" | |||||||||
| Polish/Etched | TTV(um) | <10 | <10 | <15 | ||||||||
| Bow(um) | <10 | <10 | <15 | |||||||||
| Warp(um) | <10 | <10 | <15 | |||||||||
| Polish/Polish | TTV(um) | <3 | <5 | <15 | ||||||||
| Bow(um) | <3 | <5 | <15 | |||||||||
| Warp(um) | <10 | <10 | <15 | |||||||||
