20th International Conference on Molecular Beam Epitaxy

 
IC-MBE 2016 is over. Thank you for coming! See you in Shanghai in 2018!
 
 After the successful conferences in Berlin, Germany (2010), Nara, Japan (2012) and Flagstaff, USA (2014), the 19th International Conference on Molecular-Beam Epitaxy will take place in Montpelier, France. The International Conference on Molecular Beam Epitaxy (MBE 2016) provides a prominent international forum for reporting new developments in the areas of fundamental and applied molecular beam epitaxy research, including advances in the technique, synthesis of new materials, discovery of new physical properties, formation of novel heterostructures, and the development of innovative devices.

 
The 20th International Conference on Molecular Beam Epitaxy (MBE 2018) will be held in September 2018 (Not Final). The 20th International Conference on Molecular Beam Epitaxy (MBE 2018) is a conference that covers topics such as:
 

• Molecular Beam Epitaxy growth modifications
• Fundamentals of Molecular Beam Epitaxy growth
• Molecular Beam Epitaxy technology (e.g. in situ monitoring)
• Materials characterization
• III-Nitrides and dilute-nitrides
• Molecular Beam Epitaxy as a production technology
• II-VI materials
• Oxides
• III-V materials and structures
• ZnO
• SiGeSnC alloys, SiC, and graphene
• Heteroepitaxy
• Low dimensional nanostructures
• Hybrid materials
• Photonic devices
• Solar cells
• Thermoelectrics
• Electronic devices
• Device physics
• Spintronics