砷化铟衬底(InAs Wafer)
发布于2017-11-21 20:18 文章来源:未知
砷化铟衬底 InAs Wafers
![]() Provided By Wafer Technology
♦较高的电子迁移率和迁移率比值(μe/μh=70),是制造霍耳器件的理想材料。
♦可匹配GaAsSb、InAsPSb和InAsSb多元外延材料做MBE生长。 ♦液封直拉法(CZ),保证了材料的纯度可以达到99.9999%(6N)。 ♦所有基片都经过精密抛光并充保护气氛保护,满足Epi-Ready使用要求。 ♦晶向选择:可提供其他晶向,如(110)。 ♦先进的光学测量技术,如椭偏仪等,确保每一片基片的表面干净无污染。 ♦生产厂家: Wafer Technology, UK |
Wafer Specifications | ||||||||||
Diameter Slices | 2" | 3" | |||||||||
Orientation | (100) +/-0.1° | (100) +/- 0.1° | |||||||||
Diameter (mm) | 50.5 +/- 0.5 | 76.2 +/- 0.4 | |||||||||
Flat Option | EJ | EJ | |||||||||
Flat Tolerance | +/- 0.1° | +/- 0.1° | |||||||||
Major Flat Length (mm) | 16 +/- 2 | 22 +/- 2 | |||||||||
Minor Flat Length (mm) | 8 +/- 1 | 11 +/- 1 | |||||||||
Thickness (um) | 500 +/- 25 | 625 +/- 25 | |||||||||
Electrical and Dopant Specifications | |||||||||||
Dopant | Type |
Carrier
Concentration cm-3
|
Mobility
cm^2•V^-1•s^-1
|
||||||||
Undoped | n-type | (1-3)*10^16 | >23000 | ||||||||
Low Sulphur | n-type | (4-8)*10^16 | 25000-15000 | ||||||||
High Sulphur | n-type | (1-3)*10^18 | 12000-7000 | ||||||||
Low Zinc | p-type | (1-3)*10^17 | 350-200 | ||||||||
High Zinc | n-type | (1-3)*10^18 | 250-100 | ||||||||
E.P.D. cm^-2 |
2" <= 15,000 3" <= 50,000 |
||||||||||
Flatness Specifications | |||||||||||
Wafer Form | 2" | 3" | |||||||||
Polish/Etched | TTV(um) | <12 | <15 | ||||||||
Bow(um) | <12 | <15 | |||||||||
Warp(um) | <12 | <15 | |||||||||
Polish/Polish | TTV(um) | <12 | <15 | ||||||||
Bow(um) | <12 | <15 | |||||||||
Warp(um) | <12 | <15 |