锑化镓衬底(GaSb Wafer)
发布于2017-11-21 20:17 文章来源:未知
锑化镓衬底 GaSb Wafers
![]() Provided By Wafer Technology
♦新一代二类超晶格基片,可以制造更长波长(8 ~ 14)μm 范围的探测器。
♦小于1000的腐蚀坑密度(EPD),高质量GaSb衬底用于制作多种用途的红外探测器件、火箭和监视系统中的红外成像器件以及各种火灾、气体传感器。 ♦所有基片都经过精密抛光并充保护气氛保护,满足Epi-Ready使用要求。 ♦晶向选择:可提供其他晶向,如(110)。 ♦先进的光学测量技术,包括椭偏仪、粒子监测器等,保证我们生产的每一片基片的表面干净无污染。 ♦生产厂家: Wafer Technology, UK;Mateck Crystal, Germany;5N Plus, USA。 |
Wafer Specifications | ||||||||||
Diameter Slices | 2" | 3" | |||||||||
Orientation | (100) +/-0.1° | (100) +/- 0.1° | |||||||||
Diameter (mm) | 50.5 +/- 0.5 | 76.2 +/- 0.4 | |||||||||
Flat Option | EJ | EJ | |||||||||
Flat Tolerance | +/- 0.1° | +/- 0.1° | |||||||||
Major Flat Length (mm) | 16 +/- 2 | 22 +/- 2 | |||||||||
Minor Flat Length (mm) | 8 +/- 1 | 11 +/- 1 | |||||||||
Thickness (um) | 500 +/- 25 | 625 +/- 25 | |||||||||
Electrical and Dopant Specifications | |||||||||||
Dopant | Type |
Carrier
Concentration cm-3
|
Mobility
cm^2•V^-1•s^-1
|
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Undoped | p-type | <=2*10^17 | >500 | ||||||||
Zinc | p-type | >=1*10^18 | 450-200 | ||||||||
Tellurium | n-type | (1-9)*10^17 | 3500-2000 | ||||||||
Low Tellurium | n-type | <=2*10^17 | 3500-2000 | ||||||||
High Tellurium | n-type | >=5*10^17 | 3500-2000 | ||||||||
E.P.D. cm^-2 |
n-type: 2", 3" <= 1,000, 4" <= 2,000 p-type: 2" <= 2,000, 3" <= 5,000 |
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Flatness Specifications | |||||||||||
Wafer Form | 2" | 3" | |||||||||
Polish/Etched
|
TTV(um) | <8 | <8 | ||||||||
Bow(um) | <8 | <8 | |||||||||
Warp(um) | <12 | <12 | |||||||||
Polish/Polish | TTV(um) | <5 | <5 | ||||||||
Bow(um) | <5 | <5 | |||||||||
Warp(um) | <8 | <8 |