锑化铟衬底（InSb Wafer）
发布于2017-11-21 20:16 文章来源：未知
锑化铟衬底 InSb Wafers
 Provided By Wafer Technology
♦重要半导体材料之一。经熔炼提纯的单晶, 可制成具有特殊性能的红外探测器件等。
♦Czochralski Method 法生长工艺，保证了材料的纯度。 ♦所有基片都经过精密抛光并充保护气氛保护，满足Epi-Ready使用要求。 ♦晶向选择：可提供其他晶向，如(110)、（111）。 ♦先进的光学测量技术，包括椭偏仪、粒子监测器等，保证我们生产的每一片基片的表面干净无污染。 ♦生产厂家: Wafer Technology, UK；Mateck, Germany；5N Plus，USA。 |
Wafer Specifications | |||||||||||
| Diameter Slices | 2" | 3" | 4" | |||||||||
| Orientation | (100) +/-0.1° | (100) +/- 0.1° | (100) +/- 0.1° | |||||||||
| Diameter (mm) | 50.5 +/- 0.5 | 76.2 +/- 0.4 | 100.0 +/- 0.5 | |||||||||
| Flat Option | 2 Flat at 120° | 2 Flat at 120° | 2 Flat at 120° | |||||||||
| Flat Tolerance | +/- 0.1° | +/- 0.1° | +/- 0.1° | |||||||||
| Major Flat Length (mm) | 16 +/- 2 | 22 +/- 2 | 32 +/- 2 | |||||||||
| Minor Flat Length (mm) | 8 +/- 1 | 11 +/- 1 | 18 +/- 2 | |||||||||
| Thickness (um) | 625 +/- 25 | 800/900 +/- 25 | 1000 +/- 25 | |||||||||
| Electrical and Dopant Specifications | ||||||||||||
| Dopant | Type |
Carrier
Concentration cm-3
|
E.P.D. cm^-2 |
Mobility
cm^2•V^-1•s^-1
|
||||||||
| Undoped | n-type | (0.5-3)*10^14 |
2", 3", 4" <=50 |
>=4*10^5 | ||||||||
| Tellurium | n-type | (1-7)*10^17 | >=2.5*10^4 | |||||||||
| Low Tellurium | n-type | (0.4-2)*10^15 | >=2.5*10^5 | |||||||||
| High Tellurium | n-type | >=1*10^18 | Not Specified | |||||||||
| Germanium | p-type | (0.5-5)*10^15 | 2" <=100 | 8000-4000 | ||||||||
| Flatness Specifications | ||||||||||||
| Wafer Form | 2" | 3" | 4" | |||||||||
| Polish/Etched | TTV(um) | <15 | <15 | <15 | ||||||||
| Bow(um) | <10 | <10 | <15 | |||||||||
| Warp(um) | <15 | <15 | <15 | |||||||||
| Polish/Polish | TTV(um) | <5 | <5 | <5 | ||||||||
| Bow(um) | <5 | <5 | <5 | |||||||||
| Warp(um) | <8 | <8 | <10 | |||||||||
